symbol parameter ratings unit v ces collector-emitter voltage 600 volts v ge gate-emitter voltage 20 i c1 continuous collector current @ t c = 25c 283 amps i c2 continuous collector current @ t c = 110c 158 i cm pulsed collector current 1 600 ssoa switching safe operating area @ t j = 175c 600a @ 600v p d total power dissipation 682 watts t j , t stg operating and storage junction temperature range -55 to 175 c t l max. lead temp. for soldering: 0.063 from case for 10 sec. 300 maximum ratings all ratings: t c = 25c unless otherwise speci ? ed. symbol characteristic / test conditions min typ max unit v (br)ces collector-emitter breakdown voltage (v ge = 0v, i c = 4ma) 600 - - volts v ge(th) gate threshold voltage (v ce = v ge , i c = 3.2ma, t j = 25c) 5.0 5.8 6.5 v ce(on) collector emitter on voltage (v ge = 15v, i c = 200a, t j = 25c) 1.05 1.45 1.85 collector emitter on voltage (v ge = 15v, i c = 200a, t j = 125c) - 1.65 - i ces collector cut-off current (v ce = 600v, v ge = 0v, t j = 25c) 2 --2 5 a collector cut-off current (v ce = 600v, v ge = 0v, t j = 125c) 2 - - 1000 i ges gate-emitter leakage current (v ge = 20v) - - 600 na r g(int) integrated gate resistor - 2 - static electrical characteristics caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed . microsemi website - http://www.microsemi.com 050-7628 rev a 9-2008 apt200gn60b2g 600v, v ce(on) = 1.45v typical field stop igbt utilizing the latest field stop and trench gate technologies, these igbts have ultra low v ce(on) and are ideal for low frequency applications that require absolute minimum conduction loss. easy paralleling is a result of very tight parameter distribution and a slightly positive v ce(on) temperature coef ? cient. a built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. low gate charge simpli ? es gate drive design and minimizes losses. 1200v field stop trench gate: low v ce(on) easy paralleling integrated gate resistor :low emi, high reliability rohs compliant applications: welding, inductive heating, solar inverters, smps, motor drives, ups downloaded from: http:///
050-7628 rev a 9-2008 dynamic characteristics apt200gn60b2g symbol characteristic test conditions min typ max unit c ies input capacitance v ge = 0v, v ce = 25v f = 1mhz - 14100 - pf c oes output capacitance - 461 - c res reverse transfer capacitance - 393 - v gep gate-to-emitter plateau voltage gate charge v ge = 15v v ce = 300v i c = 100a - 8.2 - v q g total gate charge - 1180 - nc q ge gate-emitter charge -8 5 - q gc gate-collector charge - 660 - ssoa switching safe operating area t j = 150c, r g = 1.0 7 , v ge = 15v, l = 100 h, v ce = 600v 600 a t d(on) turn-on delay time inductive switching (25c) v cc = 400v v ge = 15v i c = 200a r g = 1.0 t j = +25c -5 0 - ns t r current rise time -8 0 - t d(off) turn-off delay time - 560 - t f current fall time - 100 - e on1 turn-on switching energy 4 -1 3 - mj e on2 turn-on switching energy 5 -1 5 - e off turn-off switching energy 6 -1 1 - t d(on) turn-on delay time inductive switching (125c) v cc = 400v v ge = 15v i c = 200a r g = 1.0 t j = +125c -5 0 - ns t r current rise time -8 0 - t d(off) turn-off delay time - 620 - t f current fall time -7 0 - e on1 turn-on switching energy 4 -1 4 - mj e on2 turn-on switching energy 5 -1 6 - e off turn-off switching energy 6 -1 0 - symbol characteristic / test conditions min typ max unit r jc junction to case (igbt) - - 0.13 c/w r jc junction to case (diode) - - n/a w t package weight - 6.1 - gm 1 repetitive rating: pulse width limited by maximum junction temperature. 2 for combi devices, i ces includes both igbt and fred leakages 3 see mil-std-750 method 3471. 4 e on1 is the clamped inductive turn-on energy of the igbt only, without the effect of a commutating diode reverse recovery current adding to the igbt turn-on loss. tested in inductive switching test circuit shown in ? gure 21, but with a silicon carbide diode. 5 e on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the igbt turn-on switching loss. (see figures 21, 22.) 6 e off is the clamped inductive turn-off energy measured in accordance with jedec standard jesd24-1. (see figures 21, 23.) 7 r g is external gate resistance not including gate driver impedance. thermal and mechanical characteristics microsemi reserves the right to change, without notice, the speci? cations and information contained herein. downloaded from: http:///
typical performance curves apt200gn60b2g 050-7628 rev a 9-2008 0 50 100 150 200 250 300 350 400 450 500 -50 -25 0 25 50 75 100 125 150 0 0.5 1.0 1.5 2.0 2.5 3.0 0 25 50 75 100 125 150 175 0 2 4 6 8 10 12 14 16 0 200 400 600 800 1000 1200 1400 1600 0 0.5 1.0 1.5 2.0 2.5 3.0 8 10 12 14 16 0 50 100 150 200 250 300 350 400 0 2 4 6 8 10 12 0 50 100 150 200 250 300 350 400 450 0 4 8 12 16 20 24 28 32 0 50 100 150 200 250 300 350 400 0 0.5 1 1.5 2 2.5 3 250 s pulse test<0.5 % duty cycle t j = 25c. 250 s pulse test <0.5 % duty cycle v ge = 15v. 250 s pulse test <0.5 % duty cycle i c = 100a i c = 200a i c = 400a i c = 100a i c = 200a i c = 400a 13v 8v 12v 7v 15v i c = 200a t j = 25c v ce = 480v v ce = 300v v ce = 120v t j = 25c t j = -55c v ge = 15v t j = 55c t j = 150c v ce , collector-to-emitter voltage (v) figure 1, output characteristics (t j = 25c) i c , collector current (a) t j = 25c t j = 125c v ce , collector-to-emitter voltage (v) figure 2, output characteristics (t j = 25c) i c , collector current (a) t j = 125c v ce , gate-to-emitter voltage (v) figure 3, transfer characteristics i c , collector current (a) v ge , gate-to-emitter voltage (v) figure 5, on state voltage vs gate-to-emitter voltage v ce , collector-to-emitter voltage (v) gate charge (nc) figure 4, gate charge v ge , gate-to-emitter voltage (v) t j , junction temperature (c) figure 6, on state voltage vs junction temperature v ce , collector-to-emitter voltage (v) t c , case temperature (c) figure 8, dc collector current vs case temperature i c , dc collector current (a) 0.75 0.80 0.85 0.90 0.95 1.00 1.05 1.10 -.50 -.25 0 25 50 75 100 125 150 t j , junction temperature figure 7, threshold voltage vs junction temperature v gs(th) , threshold voltage (normalized) 7.5v 8.5v 9v t j = 150c downloaded from: http:///
050-7628 rev a 9-2008 typical performance curves apt200gn60b2g 0 5 10 15 20 25 30 35 0 25 50 75 100 125 0 10 20 30 40 50 60 70 0 5 10 15 20 0 5 10 15 20 25 40 80 120 160 200 240 280 320 0 5 10 15 20 25 30 35 40 80 120 160 200 240 280 320 0 50 100 150 200 250 40 80 120 160 200 240 280 320 0 20 40 60 80 100 120 140 160 180 40 80 120 160 200 240 280 320 0 100 200 300 400 500 600 700 800 40 80 120 160 200 240 280 320 0 10 20 30 40 50 60 40 80 120 160 200 240 280 320 v ge =15v,t j =125c v ge =15v,t j =25c v ce = 400v r g = 1.0 l = 100 h v ce = 400v v ge = +15v r g = 1.0 v ce = 400v t j = 25c , or 125c r g = 1.0 l = 100 h v ge = 15v v ce = 400v v ge = +15v r g = 1.0 v ce = 400v v ge = +15v r g = 1.0 r g = 1.0 , l = 100 h, v ce = 400v t j = 125c t j = 25c t j = 125c t j = 25c r g = 1.0 , l = 100 h, v ce = 400v t j = 25 or 125c,v ge = 15v t j = 125c, v ge = 15v t j = 25c, v ge = 15v e on2, 400a e off, 400a e on2, 200a e off, 200a e on2, 100a e off, 100a v ce = 400v v ge = +15v t j = 125c e on2, 400a e off, 400a e on2, 200a e off, 200a e on2, 100a e off, 100a i ce , collector-to-emitter current (a) figure 9, turn-on delay time vs collector current t d(on) , turn-on delay time (ns) i ce , collector-to-emitter current (a) figure 10, turn-off delay time vs collector current t d(off) , turn-off delay time (ns) i ce , collector-to-emitter current (a) figure 11, current rise time vs collector current t r , rise time (ns) i ce , collector-to-emitter current (a) figure 12, current fall time vs collector current t r , fall time (ns) i ce , collector-to-emitter current (a) figure 13, turn-on energy loss vs collector current e on2 , turn on energy loss ( j) i ce , collector-to-emitter current (a) figure 14, turn-off energy loss vs collector current e off , turn off energy loss ( j) r g , gate resistance (ohms) figure 15, switching energy losses vs gate resistance switching energy losses ( j) t j , junction temperature (c) figure 16, switching energy losses vs junction temperature switching energy losses ( j) downloaded from: http:///
typical performance curves apt200gn60b2g 050-7628 rev a 9-2008 0 10 20 30 40 50 60 70 0 50 100 150 200 250 300 0 0.02 0.04 0.06 0.08 0.10 0.12 0.14 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 100 1,000 10,000 100,000 0 10 20 30 40 50 z jc , thermal impedance (c/w) 0.3 d = 0.9 0.7 single pulse rectangular pulse duration (seconds) figure 19a, maximum effective transient thermal impedance, junction-to-case vs pulse duration figure 19b, transient thermal impedance model f max , operating frequency (khz) i c , collector current (a) figure 20, operating frequency vs collector current t j = 125 c t c = 75 c d = 50 %v ce = 400v r g = 1.0 0.5 0.1 0.05 f max = min (f max , f max2 ) 0.05 f max1 = t d(on) + t r + t d(off) + t f p diss - p cond e on2 + e off f max2 = p diss = t j - t c r jc c oes c res c ies peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: 75c 100c dissipated power (watts) t j (c) t c (c) z ext are the external thermal impedances: case to sink, sink to ambient, etc. set to zero when modeling only the case to junction. z ext v ce , collector-to-emitter voltage (volts) figure 17, capacitance vs collector-to-emitter voltage c, capacitance (pf) 0 100 200 300 400 500 600 700 0 100 200 300 400 500 600 700 v ce , collector-to-emitter voltage figure 18, minimum switching safe operating area i c , collector current (a) 0.032 0.099 .000443 .0058601 downloaded from: http:///
050-7628 rev a 9-2008 apt200gn60b2g dimensions in millimeters and (inches) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016)0.79 (.031) collector emitter gate collector 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 5.45 (.215) bsc 2.87 (.113)3.12 (.123) 2-plcs. t-max ? package outline figure 22, turn-on switching waveforms and de? nitions t j = 125c collector current collector voltage 5% 10% t d(on) 90% 10% t r 5% switching energy figure 23, turn-off switching waveforms and de? nitions t j = 125c collector voltage collector current gate voltage switching energy 0 90% t d(off) 10% t f 90% i c a d.u.t. v ce v cc apt100dq60 figure 21, inductive switching test circuit gate voltage downloaded from: http:///
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